Full PDF Text Transcription for IXTP64N10L2 (Reference)
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IXTP64N10L2. For precise diagrams, and layout, please refer to the original PDF.
isc N-Channel MOSFET Transistor IXTP64N10L2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 32mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% ...
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32mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Current Regulators ·Solid State Circuit Breakers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 64 IDM Drain Current-Single Pulsed 140 PD Total Dissipation @TC=25℃ 357 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance
IXTP64N10L2 Datasheet
