Download the IXTP64N10L2 datasheet PDF.
This datasheet also covers the IXTA64N10L2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Full PDF Text Transcription for IXTP64N10L2 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTP64N10L2. For precise diagrams, and layout, please refer to the original PDF.
XTH64N10L2 VDSS = 100V ID25 = 64A RDS(on) 32m N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V 20 V 30 V TC = 25C 64 A TC = 25C, Pulse Width Limited by TJM 140 A TC = 25C TC = 25C 32 A 2 J TC = 25C 357 W -55 to +150 C +150 C -55 to +150 C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220 & TO-247) 1.13 / 10 N/lb