Inchange Semiconductor IXTQ110N10P
N-Channel MOSFET
| Part No. | IXTQ110N10P |
|---|---|
| Datasheet | IXTQ110N10P Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Drain Source Voltage- : VDSS= 100V(Min)●Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max)
●Fast Switching
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●Switch-Mode and Resonant-Mode Power Supplies●DC-DC Converters
●AC and DC Motor Drives
●Robotics and Servo Controls
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 110 A IDM Drain Current-Single Plused 250 A PD Total Dissipation @TC=25℃ 480 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.31 UNIT ℃/W IXTQ110N10P isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor
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ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source...