IXYS IXTQ110N10P
N-Channel MOSFET
| Part No. | IXTQ110N10P |
|---|---|
| Datasheet | IXTQ110N10P Download |
| Manufacturer |  IXYS |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
100 100 ± 20 V V V A A A A mJ J V/ns TO-3P (IXTQ) TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 110 75 250 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 G D S (TAB) TO-268 (IXTT) G S D = Drain TAB = Drain W °C °C °C °C G = Gate S = Source D (TAB)FEATURES
z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P) 300 1.13/10 Nm/lb.in. 5.5 5.0 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. Typ. Max. 100 2.5 5.0 ±100 25 250 15 V V nA µA µA mΩ z z z Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % PolarHTTM DMOS transistors utilize proprietary designs and process.
