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IXTQ160N10T - N-ChannelMOSFET

Key Features

  • Drain Source Voltage- : VDSS= 100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max).
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription for IXTQ160N10T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTQ160N10T. For precise diagrams, and layout, please refer to the original PDF.

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max) ·Fast Switching ·100% avalanche...

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rce On-Resistance : RDS(on) = 7mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·Robotics and Servo Controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 160 A IDM Drain Current-Single Plused 430 A PD Total Dissipation @TC=25℃ 430 W Tj Max.

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Brand Logo Part Number Description Manufacturer
IXYS Corporation Logo IXTQ160N10T Power MOSFET IXYS Corporation

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