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IXTQ160N10T - Power MOSFET

Download the IXTQ160N10T datasheet PDF. This datasheet also covers the IXTH160N10T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density.

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Note: The manufacturer provides a single datasheet file (IXTH160N10T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTQ160N10T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTQ160N10T. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH160N10T IXTQ160N10T VDSS = ID25 = RDS(on) ≤ 100 160 7.0 V A mΩ TO...

View more extracted text
IXTH160N10T IXTQ160N10T VDSS = ID25 = RDS(on) ≤ 100 160 7.0 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 Maximum Ratings 100 100 ± 30 160 75 430 25 500 V V V A A A A mJ 3 V/ns 430 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1

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