IXTQ180N085T - N-ChannelMOSFET

Features

Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXTQ180N085T N-ChannelMOSFET by INCHANGE - Datasheet Preview — Datasheet preview – IXTQ180N085T

Datasheet Details

Part number	IXTQ180N085T
Manufacturer	Inchange Semiconductor
File Size	254.88 KB
Description	N-ChannelMOSFET
Datasheet	IXTQ180N085T Datasheet
Additional preview pages of the IXTQ180N085T datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE VDSS Drain-Source Voltage 85 UNIT V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 180 A IDM Drain Current-Single Pulsed 480 A PD Total Dissipation @TC=25℃ 430 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBO L PARAMETER MAX Rth(j-c) Junction-to-case thermal resistance 0.

Published: Nov 21, 2020 |