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IXTQ180N085T - Power MOSFET

Download the IXTQ180N085T datasheet PDF. This datasheet also covers the IXTH180N085T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages 175°C Operating Temperature Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages Easy to Mount Space Savings High Power Density.

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Note: The manufacturer provides a single datasheet file (IXTH180N085T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTQ180N085T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTQ180N085T. For precise diagrams, and layout, please refer to the original PDF.

TrenchMVTM Power MOSFET IXTH180N085T IXTQ180N085T N-Channel Enhancement Mode Avalanche rated Fast Intrinsic Rectifier VDSS = 85V ID25 = 180A ≤RDS(on) 5.5mΩ TO-247 Symbol ...

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trinsic Rectifier VDSS = 85V ID25 = 180A ≤RDS(on) 5.5mΩ TO-247 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247&TO-3P) TO-247 TO-3P Maximum Ratings 85 85 V V ±20 V 180 A 75 A 480 A 25 A 1.0 J 430 W -55 to +175 +175 -55 to +175 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6.0 g 5.