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IXTQ180N085T - Power MOSFET

This page provides the datasheet information for the IXTQ180N085T, a member of the IXTH180N085T Power MOSFET family.

Features

  • International Standard Packages 175°C Operating Temperature Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages Easy to Mount Space Savings High Power Density.

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TrenchMVTM Power MOSFET IXTH180N085T IXTQ180N085T N-Channel Enhancement Mode Avalanche rated Fast Intrinsic Rectifier VDSS = 85V ID25 = 180A ≤RDS(on) 5.5mΩ TO-247 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247&TO-3P) TO-247 TO-3P Maximum Ratings 85 85 V V ±20 V 180 A 75 A 480 A 25 A 1.0 J 430 W -55 to +175 +175 -55 to +175 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6.0 g 5.
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