Datasheet4U Logo Datasheet4U.com

IXTQ182N055T - N-ChannelMOSFET

Key Features

  • Drain Source Voltage- : VDSS= 55V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 3.3mΩ(Max).
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Full PDF Text Transcription for IXTQ182N055T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTQ182N055T. For precise diagrams, and layout, please refer to the original PDF.

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.3mΩ(Max) ·Fast Switching ·100% avalanch...

View more extracted text
ce On-Resistance : RDS(on) = 3.3mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 260 A IDM Drain Current-Single Plused 780 A PD Total Dissipation @TC=25℃ 480 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
IXYS Corporation Logo IXTQ182N055T Power MOSFET IXYS Corporation

More Datasheets from Inchange Semiconductor

Part Number Description
IXTQ180N085T N-ChannelMOSFET
IXTQ180N10T N-ChannelMOSFET
IXTQ18N60P N-Channel MOSFET
IXTQ102N15T N-Channel MOSFET
IXTQ102N20T N-Channel MOSFET
IXTQ110N055P N-ChannelMOSFET
IXTQ110N10P N-Channel MOSFET
IXTQ120N15P N-ChannelMOSFET
IXTQ120N20P N-ChannelMOSFET
IXTQ130N10T N-ChannelMOSFET