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Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTH182N055T IXTQ182N055T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 182 5.0
V A mΩ
TO-247 (IXTH)
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque
TO-3P TO-247
Maximum Ratings
55 55
± 20
182 75
490
25 1.0
V V
V
A A A
A J
3 V/ns
G D
TO-3P (IXTQ) S
G D S
(TAB) (TAB)
360 W
-55 ... +175 175
-55 ... +175
°C °C °C
300 °C 260 °C
1.
IXTQ182N055T Datasheet
