Full PDF Text Transcription for IXTQ26N50P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTQ26N50P. For precise diagrams, and layout, please refer to the original PDF.
el gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 26 IDM Drain Current-Single Pulsed 78 PD Total Dissipation 400 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.31 UNIT ℃/W IXTQ26N50P isc website：www.iscsemi.
IXTQ26N50P Datasheet
