Click to expand full text
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS
VDSS =
ID25 = ≤ RDS(on)
500 V 26 A 230 mΩ
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS
dv/dt
PD T
J
TJM Tstg TL TSOLD Md Weight
TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuos Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) TO-3P TO-268 PLUS220 & PLUS220SMD
500
V
G
D
500
V
S
±30
V TO-268 (IXTT)
±40
V
D (TAB)
26
A
78
A
G S
26
A
40
mJ PLUS220 (IXTV)
1.
IXTQ26N50P Datasheet
