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IXTU12N06T - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on) ≤ 85mΩ@VGS=10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number IXTU12N06T
Manufacturer INCHANGE
File Size 269.00 KB
Description N-Channel MOSFET
Datasheet download datasheet IXTU12N06T Datasheet
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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 85mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Uninterrupted Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pulsed 30 A PD Total Dissipation @TC=25℃ 33 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 4.5 UNIT ℃/W IXTU12N06T isc website：www.
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