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Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTU12N06T IXTY12N06T
VDSS = ID25 =
RDS(on) ≤
60V 12A 85mΩ
TO-251 (IXTU)
Symbol
VDSS VDGR
VGSM
ID25 IDM ILRMS
IAR EAS
PD
TJ TJM Tstg
TL TSOLD Md
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM Package Current Limit, RMS TO-252 TC = 25°C TC = 25°C TC = 25°C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Mounting torque TO-251 TO-252
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 25μA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.
IXTU12N06T Datasheet
