IXTU2N80P - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤ 6Ω@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IXTU2N80P
Manufacturer	INCHANGE
File Size	270.21 KB
Description	N-Channel MOSFET
Datasheet	IXTU2N80P Datasheet
Additional preview pages of the IXTU2N80P datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IXTU2N80P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Uninterrupted Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 2 IDM Drain Current-Single Pulsed 4 PD Total Dissipation @TC=25℃ 70 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance

Published: Nov 23, 2020 |