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IXTY32P05T - P-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤39mΩ.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤39mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -50 V VGS Gate-Source Voltage ±15 V ID Drain Current-Continuous -32 A IDM Drain Current-Single Pulsed -110 A PD Total Dissipation @TC=25℃ 83 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 1.5 UNIT ℃/W IXTY32P05T isc website：www.iscsemi.