IXTY32P05T Datasheet | Specifications & PDF Download

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤39mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for

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TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY32P05T IXTA32P05T IXTP32P05T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ

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