With TO-3PN packaging
Insulated package
Can be operated in 3 quadrants
Advanced technology to provide customers with high
commutation performances
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Switching applications
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isc Thyristors
JST41Z-1200BW
DESCRIPTION ·With TO-3PN packaging ·Insulated package ·Can be operated in 3 quadrants ·Advanced technology to provide customers with high
commutation performances ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM IT(RSM)
Repetitive peak reverse voltage Average on-state current
Tc=75℃
ITSM Surge non-repetitive on-state current
50HZ
PG(AV) Average gate power dissipation ( over any 20 ms period )
Tj
Operating junction temperature
Tstg Storage temperature
MAX
1200 1200
40
UNIT
V V A
400
A
1
W
-40~125 ℃ -40~150 ℃
ELECT
JST41Z-1200BW Datasheet
