Inchange Semiconductor KSA1156
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | KSA1156 |
|---|---|
| Datasheet | KSA1156 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage●High voltage
●High speed switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High voltage switching●Low power switching regulator
●DC-DC converter
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 1.0 W 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -100mA; IB= -10mA VBE(sat) Collector-Emitter Saturation Voltage IC= -100mA; IB= -10mA ICBO Collector Cutoff Current VCB= -400V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -100mA ; VCE= -5V● hFE Classifications N R O Y 30-60 40-80 60-120 100-200 KSA1156 MIN TYP.
