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KSA1156 - PNP Transistor

General Description

Low Collector Saturation Voltage High voltage High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching Low power switching regulator DC-DC converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃

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isc Silicon PNP Power Transistor KSA1156 DESCRIPTION ·Low Collector Saturation Voltage ·High voltage ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching ·Low power switching regulator ·DC-DC converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 1.0 W 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.