Datasheet4U Logo Datasheet4U.com

KSA1156 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor KSA1156.

General Description

·Low Collector Saturation Voltage ·High voltage ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching ·Low power switching regulator ·DC-DC converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 1.0 W 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -100mA;

IB= -10mA VBE(sat) Collector-Emitter Saturation Voltage IC= -100mA;

KSA1156 Distributor