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KSA1156 - PNP Silicon Transistor

General Description

TO 126

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Key Features

  • High Breakdown Voltage.
  • Low Collector Saturation Voltage.
  • High Speed Switching.
  • This is a Pb.
  • Free Device.

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Datasheet Details

Part number KSA1156
Manufacturer onsemi
File Size 234.06 KB
Description PNP Silicon Transistor
Datasheet download datasheet KSA1156 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PNP Silicon Transistor KSA1156 Features • High Breakdown Voltage • Low Collector Saturation Voltage • High Speed Switching • This is a Pb−Free Device Applications • High Voltage Switching • Low Power Switching Regulator • DC−DC Converter ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Ratings Units VCBO Collector−Base Voltage −400 V VCEO Collector−Emitter Voltage −400 V VEBO Emitter−Base Voltage −7 V IB Base Current −0.25 A IC Collector Current (DC) −0.5 A ICP Collector Current (Pulse) −1 A PC Collector Dissipation, TA = 25°C TC = 25°C 1 W 10 TJ Junction Temperature 150 °C TSTG Storage Temperature −55 ~ 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.