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KSA1381 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

General Description

·Low Collector Saturation Voltage ·High voltage ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·CRT display,video output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.1 A 1.2 w 7 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSA1381 isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -20mA;

IB= -2mA VBE(sat) Collector-Emitter Saturation Voltage IC= -20mA;

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