Inchange Semiconductor KSA1381
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | KSA1381 |
|---|---|
| Datasheet | KSA1381 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage●High voltage
●High speed switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●CRT display,video outputABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.1 A 1.2 w 7 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSA1381 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -20mA; IB= -2mA VBE(sat) Collector-Emitter Saturation Voltage IC= -20mA; IB= -2mA ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -10mA ; VCE= -10V● hFE Classifications C D E F 40-80 60-120 100-200 160-320 KSA1381 MIN TYP.
