KSB596 - PNP Transistor

Inchange Semiconductor

General Description

Low Collector Saturation Voltage :VCE(sat)= -1.7(V)(Max)@IC= -3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) Complement to Type KSD526 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

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KSB596 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	KSB596
Manufacturer	Inchange Semiconductor
File Size	196.76 KB
Description	PNP Transistor
Datasheet	KSB596 Datasheet

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -1.7(V)(Max)@IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Complement to Type KSD526 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Recommended for 20~25W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.