Datasheet Details
| Part number | KSB596 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.76 KB |
| Description | PNP Transistor |
| Datasheet | KSB596-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | KSB596 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.76 KB |
| Description | PNP Transistor |
| Datasheet | KSB596-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage :VCE(sat)= -1.7(V)(Max)@IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·plement to Type KSD526 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Remended for 20~25W high-fidelity audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.4 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSB596 isc website：.iscsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSB596 | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
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