KSB596 Datasheet
KSB596 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Low Collector Saturation Voltage :VCE(sat)= -1.7(V)(Max)@IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Complement to Type KSD526 ·Minimum Lot-to-Lot variations for robust devic.
llector-Emitter Breakdown Voltage IC= -50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -5V ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff .
KSB596 Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
KSB596 KSB596 Power Amplifier Applications • Complement to KSD526 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Sy.
, IC = - 3A IC = - 3A, IB = - 0.3A VCE = - 5V, IC = - 3A VCE = - 5V, IC = - 0.5A VCB = - 10V, IE = 0 f = 1MHz 3 130 40 15 -1 -1 Min. - 80 -5 - 70 - 100 240 - 1.7 - 1.5 V V MHz pF Typ. Max. Units V V µA µA hFE Classification Classification hFE1 R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2000 Fairchild Semic.