KSB834W datasheet by Inchange Semiconductor.
| Part number | KSB834W |
|---|---|
| Datasheet | KSB834W-INCHANGE.pdf |
| File Size | 212.27 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
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1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KSB834W TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current CONDITIONS IC= -3.0A; IE= 0 MIN TYP MAX UNIT -1 V -1 V -100 μA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -100 μA hFE1 DC Current Gain hFE2 DC Current Gain IC=- 0.5A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
KSB834W | Low Frequency Power Amplifier | Fairchild Semiconductor |
 |
KSB834 | PNP Silicon Transistor | Samsung semiconductor |
|
KSB834 | Low Frequency Power Amplifier | Fairchild Semiconductor |
|
KSB834 | Low Frequency Power Amplifier | Fairchild Semiconductor |
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