Inchange Semiconductor KSB834W
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | KSB834W |
|---|---|
| Datasheet | KSB834W Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Complement to KSD880W●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Low frequency power amplifierABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ -3 A 1.5 W 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSB834W isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KSB834WELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current CONDITIONS IC= -3.0A; IB= -300mA IC= -0.5A; VCE=-5V VCB= -60V; IE= 0 MIN TYP MAX UNIT -1 V -1 V -100 μA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -100 μA hFE1 DC Current...