KSB834W Description
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KSB834W TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current CONDITIONS IC= -3.0A; IE= 0 MIN TYP MAX UNIT -1 V -1 V -100 μA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -100 μA hFE1 DC Current Gain hFE2 DC Current Gain IC=- 0.5A;.