| Part Number | KSB834W Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Complement to KSD880W ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Low frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(.
TYP MAX UNIT
-1
V
-1
V
-100 μA
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
-100 μA
hFE1
DC Current Gain
hFE2
DC Current Gain
IC=- 0.5A; VCE=- 5V
60
200
IC= -3A; VCE= -5V
20
fT
Current-Gain *Bandwidth Product IC= -0.5A; VCE= -5V 9 MHz Cob Collector output capacitance VCB=-10. |
KSB834W Datasheet and Specifications PDF
The KSB834W is a PNP Transistor.
Key Specifications
| Package | TO-263-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 5.08 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | KSB834W Datasheet |
|---|---|
| Description | Low Frequency Power Amplifier |
| Manufacturer | Fairchild Semiconductor |
| Overview | KSB834W KSB834W Low Frequency Power Amplifier • Complement to KSD880W 1 D2-PAK 3.Emitter 1.Base 2.Collector PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise note. E = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A IC = - 3A, IB = - 0.3A VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 0.5A VCB = - 10V, IE = 0 f = 1MHz VCC = -30V, IC = - 1A IB1 = - IB2 = - 0.2A RL = 30Ω - 60 60 20 - 0.5 - 0.7 9 150 0.4 1.7 0.5 200 -1 -1 V V MHz pF µs µs µs Min. Typ. Max. - 100 - 100 Units . |