Datasheet Details
| Part number | KSC2690 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.78 KB |
| Description | NPN Transistor |
| Datasheet | KSC2690-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | KSC2690 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.78 KB |
| Description | NPN Transistor |
| Datasheet | KSC2690-INCHANGE.pdf |
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·High voltage and high fT ·Complementary to kSA1220 PNP transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SC2690 is general purpose transistors designed For use in audio and radio frequency power amplifiers.
·Suitable for use in driver stage of 50 to 100W audio Amplifiers and output stage of TV vertical deflection circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage RBE=150Ω 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 1.2 A 20 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSC2690 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=1A;
IB= 200mA VBE(sat) Base-Emitter Saturation Voltage IC=1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KSC2690 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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KSC2690 | NPN Transistor | LGE |
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KSC2690A | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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KSC2690A | NPN Transistor | LGE |
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KSC2690A | NPN Epitaxial Silicon Transistor | ON Semiconductor |
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