Inchange Semiconductor KSC2690
The 2SC2690 is general purpose transistors designed For use in audio and radio frequency power amplifiers. The information contained herein is presented only as a guide for the applications of our products.DESCRIPTION
●High voltage and high fT●Complementary to kSA1220 PNP transistor
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●●Suitable for use in driver stage of 50 to 100W audio Amplifiers and output stage of TV vertical deflection circuit
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage RBE=150Ω 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 1.2 A 20 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSC2690 isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=1A; IB= 200mA VBE(sat) Base-Emitter Saturation Voltage IC=1A; IB= 200mA ICBO Collecto...