Datasheet Details
| Part number | KSC3503 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.41 KB |
| Description | NPN Transistor |
| Datasheet | KSC3503-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor KSC3503.
| Part number | KSC3503 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.41 KB |
| Description | NPN Transistor |
| Datasheet | KSC3503-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage ·High breakdown voltage ·Silicon NPN epitaxial planar transistor ·Small reverse transfer capacitance and excellent high frequency characteristic ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high definition CRT display ,video output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 0.1 A 7 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base breakdown voltage IC=1mA ;
IB=0 V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;
IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KSC3503 | NPN Epitaxial Silicon Transistor | ON Semiconductor |
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KSC3503 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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