KSC3503 Datasheet and Specifications PDF

The KSC3503 is a NPN Epitaxial Silicon Transistor.

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Part NumberKSC3503 Datasheet
Manufactureronsemi
Overview NPN Epitaxial Silicon Transistor KSC3503 Features • High Voltage: VCEO = 300 V • Low Reverse Transfer Capacitance: Cre = 1.8 pF at VCB = 30 V • Excellent Gain Linearity for Low THD • High Frequency: .
* High Voltage: VCEO = 300 V
* Low Reverse Transfer Capacitance: Cre = 1.8 pF at VCB = 30 V
* Excellent Gain Linearity for Low THD
* High Frequency: 150 MHz
* Full Thermal and Electrical Spice Models are Available
* Complement to KSA1381
* These Devices are Pb
*Free and are RoHS Compliant Application.
Part NumberKSC3503 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Low Collector Saturation Voltage ·High breakdown voltage ·Silicon NPN epitaxial planar transistor ·Small reverse transfer capacitance and excellent high frequency characteristic ·100% avalanche teste. V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC=20mA; IB= 2mA VBE(sat) Base-Emitter Saturation Voltage IC=20mA; IB= 2mA ICBO Collector Cutoff Current VCB= 300V ; IE= 0 IEBO .
Part NumberKSC3503 Datasheet
DescriptionNPN Epitaxial Silicon Transistor
ManufacturerFairchild Semiconductor
Overview KSC3503 KSC3503 CRT Display, Video Output • High Voltage : VCEO=300V • Low Reverse Transfer Capacitance : Cre=1.8pF @ VCB=30V 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transist. dth Product Output Capacitance Reverse Transfer Capacitance Test Condition IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCB = 200V, IE = 0 VEB = 4V, IC = 0 VCE = 10V, IC = 10mA IC = 20mA, IB = 2mA IC = 20mA, IB = 2mA VCE = 30V, IC = 10mA VCB = 30V, f = 1MHz VCB = 30V, f = 1MHz 150 2.6 1.8 40.