Inchange Semiconductor KSC5028
Silicon NPN Power Transistor
| Part No. | KSC5028 |
|---|---|
| Datasheet | KSC5028 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Breakdown Voltage- : V(BR)CBO= 1100V(Min)●Fast Switching speed
●Wide Area of Safe Operation
●High Reliability
APPLICATIONS
●Designed for switching regulatorAPPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1.5 A 80 W 150 ℃ -55~150 ℃ isc website： 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5028ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC=5mA; RBE=∞ VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.5A; IB1=-IB2=0.3A L=2mH, Clamped V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 800 800 1100 V V V...