Datasheet Details
| Part number | KSD1692 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.27 KB |
| Description | NPN Transistor |
| Datasheet | KSD1692-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Darlington Power Transistor KSD1692.
| Part number | KSD1692 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.27 KB |
| Description | NPN Transistor |
| Datasheet | KSD1692-INCHANGE.pdf |
|
|
|
·Low Collector–Emitter Sustaining Voltage ·High DC Current Gain ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 5 A 1.3 W 15 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor KSD1692 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 3mA, L= 1.0mH MIN TY P.
Compare KSD1692 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSD1692 | NPN Silicon Darlington Transistor | Fairchild Semiconductor |
 |
KSD1692 | NPN Transistor | JCST |
| Part Number | Description |
|---|---|
| KSD1406 | NPN Transistor |
| KSD1588 | NPN Transistor |
| KSD2012 | NPN Transistor |
| KSD363 | NPN Transistor |
| KSD5072 | Silicon NPN Power Transistor |
| KSD794A | NPN Transistor |
| KSD880 | NPN Transistor |
| KSD880W | NPN Transistor |