KSD1692 Description
·Low Collector Emitter Sustaining Voltage ·High DC Current Gain ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor KSD1692 TC=25℃ unless otherwise specified SYMBOL PARAMETER...