KSD5076 Datasheet PDF

DESCRIPTION

●High Breakdown Voltage- : VCBO= 1500V (Min)
●High Switching Speed
●High Reliability

APPLICATIONS

●Designed for color TV horizontal output applicaitions

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 5 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5076

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V tf Fall Time IC= 4A , IB1= 0.8A ; IB2= -1.6A RL= 50Ω; VCC= 200V MIN TYP.