KSD5079 Datasheet PDF

DESCRIPTION

●High Breakdown Voltage- : VCBO= 1500V (Min)
●High Switching Speed
●High Reliability

APPLICATIONS

●Designed for color TV horizontal output applicaitions

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 10 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5079

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain tf Fall Time IC= 8A ; VCE= 5V IC= 6A , IB1= 1.2A ; IB2= -2.4A RL= 33.3Ω; VCC= 200V MIN TYP.