Inchange Semiconductor KSD526
Silicon NPN Power Transistor
| Part No. | KSD526 |
|---|---|
| Datasheet | KSD526 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min)●Good Linearity of hFE
●Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃
●Complement to Type KSB596
APPLICATIONS
●Designed for power amplifier applications.●Recommended for 20~25W high fidelity audio frequency amplifier output stage applications.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 80 80 5 4 0.4 30 150 -55~150 V V V A A W ℃ ℃ isc website： 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD526ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emi...