Inchange Semiconductor KSD560
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | KSD560 |
|---|---|
| Datasheet | KSD560 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)●High DC Current Gain : hFE= 2000(Min) @IC= 3.0A
●Low Saturation Voltage
●Complement to Type KSB601
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for low frequency power amplifiers and low speed switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 150 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 5 ICP Collector Current-Peak 8 IB Base Current-Continuous 0.5 Collector Power Dissipation @ Ta=25℃ 1.5 PC Collector Power Dissipation @ TC=25℃ 30 TJ Junction Temperature 150 UNIT V V V A A A W ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS INCHANGE Semiconductor KSD560 MIN TYP. MAX...