Collector-Emitter sustaining Voltage
: VCEO=60V(Min)
Good Linearity of hFE
Complement to KSB834
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Linear and switching industrial applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYM
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isc Silicon NPN Power Transistor
KSD880
DESCRIPTION ·Collector-Emitter sustaining Voltage
: VCEO=60V(Min) ·Good Linearity of hFE ·Complement to KSB834 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Linear and switching industrial applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
IB
Base Current- Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.3
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
KSD880 Datasheet
