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KSD880 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter sustaining Voltage : VCEO=60V(Min) Good Linearity of hFE Complement to KSB834 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Linear and switching industrial applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM

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Datasheet Details

Part number KSD880
Manufacturer INCHANGE
File Size 212.71 KB
Description NPN Transistor
Datasheet download datasheet KSD880 Datasheet
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isc Silicon NPN Power Transistor KSD880 DESCRIPTION ·Collector-Emitter sustaining Voltage : VCEO=60V(Min) ·Good Linearity of hFE ·Complement to KSB834 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Linear and switching industrial applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 0.3 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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