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KSD880W - NPN Transistor

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Description

Complement to KSB834W 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Co

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Datasheet Details

Part number KSD880W
Manufacturer INCHANGE
File Size 204.98 KB
Description NPN Transistor
Datasheet download datasheet KSD880W Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Complement to KSB834W ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ 3 A 1.5 W 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSD880W isc website：www.iscsemi.
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