Datasheet Details
| Part number | KSE700 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.66 KB |
| Description | PNP Transistor |
| Datasheet | KSE700-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | KSE700 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.66 KB |
| Description | PNP Transistor |
| Datasheet | KSE700-INCHANGE.pdf |
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·High DC current gain ·Low Collector Saturation Voltage ·Complement to Type KSE800 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Monolithic construction with built-in-Base-Emitter resistor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -4 A 40 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSE700 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= -60V;
IE= 0 IEBO Emitter Cutoff Current VEB= -5V;
IC= 0 hFE-1 DC Current Gain IC=- 1.5A;
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|---|---|---|---|
 |
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