Datasheet4U Logo Datasheet4U.com

KTA1381 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor KTA1381.

General Description

·High voltage ·Low reverse transfer capacitance ·Excellent gain linearity for low THD ·High frequency ·plement to KTC3503 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio voltage amplifier and current source ·CRT display ,video output ·General purpose amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -100 mA 1.5 W 7 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website: .iscsemi.

1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor KTA1381 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -20mA;

KTA1381 Distributor