Datasheet Summary
isc Silicon NPN Power Transistors
DESCRIPTION
- Low Saturation Voltage-
: VCE(sat)=1.0V(Max)@ (IC= 2A, IB=0.2A)
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
- plement to Type KTB988
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose...
