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KTD1351 - NPN Transistor

General Description

Low Saturation Voltage- : VCE(sat)=1.0V(Max)@ (IC= 2A, IB=0.2A) High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Complement to Type KTB988 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpo

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isc Silicon NPN Power Transistors DESCRIPTION ·Low Saturation Voltage- : VCE(sat)=1.0V(Max)@ (IC= 2A, IB=0.2A) ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Complement to Type KTB988 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature 0.5 A 30 W 2.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KTD1351 isc website： www.iscsemi.