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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES ᴌLow Saturation Voltage
: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A ᴌComplementary to KTB988.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
VCBO VCEO VEBO
IC IB
Collector Power Dissipation
Ta=25ᴱ Tc=25ᴱ
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING 60 60 7 3 0.5 2.0 30 150
-55ᴕ150
UNIT V V V A A
W
ᴱ ᴱ
H
E Q
KTD1351
TRIPLE DIFFUSED NPN TRANSISTOR
A R S
F B
D
T
L CC
MM K
123 J
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
O NG
P
DIM A B
C
D E F G H
J K L M
N
O P Q R S T
MILLIMETERS 10.30 MAX
15.30 MAX
0.80 Φ3.60 +_ 0.20
3.00 6.70 MAX 13.60+_ 0.50
5.60 MAX
1.37 MAX 0.50
1.50 MAX 2.54
4.
KTD1351 Datasheet
