Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
Features
ᴌLow Saturation Voltage
: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A ᴌplementary to KTB988.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
VCBO VCEO VEBO
IC IB
Collector Power Dissipation
Ta=25ᴱ Tc=25ᴱ
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING 60 60 7 3 0.5 2.0 30 150
-55ᴕ150
UNIT V V V A A
ᴱ ᴱ
TRIPLE DIFFUSED NPN TRANSISTOR
L CC
MM K
123 J
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
O NG
DIM A B
D E F G...
