Datasheet Details
| Part number | KTD600K |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.70 KB |
| Description | NPN Transistor |
| Datasheet | KTD600K-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor KTD600K.
| Part number | KTD600K |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.70 KB |
| Description | NPN Transistor |
| Datasheet | KTD600K-INCHANGE.pdf |
|
|
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·High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·plement to Type 2SB631K ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 A 8 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor KTD600K ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KTD600K | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
| Part Number | Description |
|---|---|
| KTD1351 | NPN Transistor |