KTD600K datasheet by Inchange Semiconductor.
| Part number | KTD600K |
|---|---|
| Datasheet | KTD600K-INCHANGE.pdf |
| File Size | 213.70 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor KTD600K TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
KTD600K | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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