KTD600K Description
·High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor KTD600K TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA.