The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. Complementary to KTB631K.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
VCBO VCEO VEBO
IC ICP
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature Storage Temperature Range
Tj Tstg
RATING 120 120 5 1 2 1.5 8 150
-55 150
UNIT V V V
A
W
KTD600K
EPITAXIAL PLANAR NPN TRANSISTOR
A B C
H J K
D E
F G
L
M
N
O P
12 3
1. EMITTER 2. COLLECTOR 3. BASE
DIM A B C
D E F G H J K L M N O P
MILLIMETERS 8.3 MAX
5.8 0.7 Φ3.2+_ 0.1
3.5 11.0 +_ 0.3 2.9 MAX
1.0 MAX 1.9 MAX 0.75 +_ 0.15 15.50+_ 0.
KTD600K Datasheet
