Inchange Semiconductor MBR5200
Schottky Barrier Rectifier
FEATURES
●Low Forward Voltage●Guaranteed Reverse Avalanche
●Low Power Loss/High Efficiency
●High Surge Capacity
●Low Stored Charge Majority Carrier Conduction
●Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS
●Case: Epoxy, Molded
●Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
●Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 133℃ 200 V 5 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 120 A wave, single phase, 60Hz) TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website: 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier MBR5200 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rt...