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MBR5200 Datasheet Schottky Barrier Diodes

Manufacturer: Sirectifier

Overview: MBR5150 thru MBR5200 High Tjm Low IRRM Schottky Barrier Diodes A C C(TAB) AA CC A=Anode, C=Cathode, TAB=Cathode MBR5150 MBR5200 VRRM VRMS VDC V V V 150 105 150 200 140 200 Dimensions TO-220AC Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=120oC IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) dv/dt Voltage Rate Of Change (Rated VR) VF Maximum Forward Voltage (Note 1) IF=5A @TJ=25 Co IF=5A @TJ=125 Co IF=10A @TJ=25 oC IF=10A @TJ=125oC IR Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25oC @TJ=125oC ROJC Typical Thermal Resistance (Note 2) TJ TSTG Operating Temperature Range Storage Temperature Range NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 - 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 - 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Maximum Ratings Unit 5 A 120 A 10000 0.95 - 0.95 0.80 V/us V 0.05 15 4.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Metal of silicon rectifier, majority carrier conducton.
  • Guard ring for transient protection.
  • Low power loss, high efficiency.
  • High current capability, low VF.
  • High surge capacity.
  • For use in low voltage, high frequency inverters, free whelling, and polarity protection.

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