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MBRF30H100CT Datasheet PDF

Inchange Semiconductor MBRF30H100CT

Schottky Barrier Rectifier

Part No. MBRF30H100CT
Datasheet MBRF30H100CT Download
Manufacturer
Inchange Semiconductor
Description Schottky Barrier Rectifier
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MBRF30H100CT datasheet page 1 preview

FEATURES

●Schottky barrier chip
●Low Power Loss,High Efficiency
●Guard ring for transient protection
●High Operating Junction Temperature
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●For use in low voltage ,high frequency inverters,free wheeling and polarity protection applications.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current 100 V 30 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed on 275 rated load conditions A TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website: 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBRF30H100CT THERMAL CHARACTERISTICS SYMBOL PARAMET
MBRF30H100CT page 2 preview