Inchange Semiconductor MBRF30H100CT
Schottky Barrier Rectifier
FEATURES
●Schottky barrier chip●Low Power Loss,High Efficiency
●Guard ring for transient protection
●High Operating Junction Temperature
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●For use in low voltage ,high frequency inverters,free wheeling and polarity protection applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current 100 V 30 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed on 275 rated load conditions A TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website: 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBRF30H100CT THERMAL CHARACTERISTICS SYMBOL PARAMET