Datasheet Details
| Part number | MCR310-10G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 155.40 KB |
| Description | Thyristor |
| Datasheet | MCR310-10G-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor MCR310-10G.
| Part number | MCR310-10G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 155.40 KB |
| Description | Thyristor |
| Datasheet | MCR310-10G-INCHANGE.pdf |
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·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) ITSM PG(AV) RMS on-state current Surge non-repetitive on-state current ( 1/2 cycle,sine wave;60HZ;Tc=125℃ ) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature Tc=70℃ Tp=8.3ms;Tc=70℃ MIN 800 800 10 100 0.75 -40~110 -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 20A IGT Gate-trigger current VD = 12 V;
RL=100Ω VGT Gate-trigger voltage VD = 12 V;
RL=100Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.01 5.0 mA 2.2 V 200 mA 1.5 V 2.2 ℃/W isc website：.iscsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MCR310-10G | Silicon Controlled Rectifiers | ON Semiconductor |
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MCR310-10G | 10A SCRs | Thinki Semiconductor |
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MCR310-10 | SCRs | HAOPIN |
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MCR310-10 | Thyristors | Littelfuse |
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MCR310-10 | Silicon Controlled Rectifiers | ON Semiconductor |
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