| Part Number | MCR310-10G Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MCR310 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
Designed for industrial and consumer applications such as temperature, light and sp.
TJ = *40 to 110°C) Circuit Fusing (t = 8.3 ms) IT(RMS) ITSM I2t 10 Amps 100 Amps 40 A2s Peak Gate Voltage (t p 10 ms) Peak Gate Current (t p 10 ms) Peak Gate Power (t p 10 ms) Average Gate Power Operating Junction Temperature Range Storage Temperature Range Mounting Torque VGM IGM PGM PG(AV. |
MCR310-10G Datasheet and Specifications PDF
The MCR310-10G is a Silicon Controlled Rectifiers.
Key Specifications
| Package | TO-220AB |
|---|
| Part Number | MCR310-10G Datasheet |
|---|---|
| Description | 10A SCRs |
| Manufacturer | Thinki Semiconductor |
| Overview | Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to. Blocking voltage to 800 V On-state RMS current to 10 A Ultra low gate trigger current SYMBOL VDRM IT RMS PARAMETER Repetitive peak off-state voltages (Tj=-40 to 110oC 1/2Sine Wave,RGK=1K MCR310-6G MCR310-8G MCR310-10G On-state rms current ITSM Peak non-repetitive surge current Value 400 600 8. |
| Part Number | MCR310-10G Datasheet |
|---|---|
| Description | Thyristor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·M. RM Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 20A IGT Gate-trigger current VD = 12 V; RL=100Ω VGT Gate-trigger voltage VD = 12 V; RL=100Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.01 5.0 mA 2.2 V 200 mA 1.5 V 2.2 ℃/W isc website： isc & iscsemi is reg. |