Datasheet4U Logo Datasheet4U.com

MJ10016 - NPN Transistor

General Description

With TO-3 packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ignition Alternator regulator

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJ10016 DESCRIPTION ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignition ·Alternator regulator ·Motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation Max.