MJ11017
MJ11017 is PNP Transistor manufactured by Inchange Semiconductor.
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
- High DC Current Gain-
: hFE = 400(Min)@ IC= -10A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -150V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -10A = -3.4V(Max)@ IC= -15A
- plement to the NPN MJ11018
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose amplifiers ,low frequency switching and motor control...
