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MJ11017 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Darlington Power Transistor.

General Description

·High DC Current Gain- : hFE = 400(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -150V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -10A = -3.4V(Max)@ IC= -15A ·Complement to the NPN MJ11018 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifiers ,low frequency switching and motor control applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -150 VCEO Collector-Emitter Voltage -150 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -15 ICM Collector Current-Peak -30 IB Base Current- Continuous -0.5 PC Collector Power Dissipation @TC=25℃ 175 Tj Junction Temperature 175 Tstg Storage Temperature Range -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.86 UNIT ℃/W MJ11017 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A ,IB= -0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A ,IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -15A ,IB= -0.15A VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current ICEO Collector Cutoff Current IC= -10A ;

VCE= -5V VCB=150V;IE=0 VCB=150V;IE=0;TC=150℃ VCE= -150V, IB=0 IEBO Emitter Cutoff Current VEB= -5V;

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