Click to expand full text
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ11017/D
Complementary Darlington Silicon Power Transistors
. . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector–Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) – MJ11018, 17 VCEO(sus) = 250 Vdc (Min) – MJ11022, 21 • Low Collector–Emitter Saturation VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A • Monolithic Construction • 100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.
MJ11017 Datasheet
